公开(公告)号：US12211955B2

公开(公告)日：2025-01-28

申请号：US17576716

申请日：2022-01-14

Applicant: The Regents of the University of California

Inventor： Kamruzzaman Khan ,  Elaheh Ahmadi ,  Stacia Keller ,  Christian Wurm ,  Umesh K. Mishra

IPC: H01L33/32 ,  H01L33/00

Abstract: A substrate comprising a III-N base layer comprising a first portion and a second portion, the first portion of the III-N base layer having a first natural lattice constant and a first dislocation density; and a first III-N layer having a second natural lattice constant and a second dislocation density on the III-N base layer, the first III-N layer having a thickness greater than 10 nm. An indium fractional composition of the first III-N layer is greater than 0.1; the second natural lattice constant is at least 1% greater than the first natural lattice constant; a strain-induced lattice constant of the first III-N layer is greater than 1.0055 times the first natural lattice constant; and the second dislocation density is less than 1.5 times the first dislocation density.

公开(公告)号：US20220399475A1

公开(公告)日：2022-12-15

申请号：US17576716

申请日：2022-01-14

Applicant: The Regents of the University of California

Inventor： Kamruzzaman Khan ,  Elaheh Ahmadi ,  Stacia Keller ,  Christian Wurm ,  Umesh K. Mishra

IPC: H01L33/32 ,  H01L33/00

Abstract: A substrate comprising a III-N base layer comprising a first portion and a second portion, the first portion of the III-N base layer having a first natural lattice constant and a first dislocation density; and a first III-N layer having a second natural lattice constant and a second dislocation density on the III-N base layer, the first III-N layer having a thickness greater than 10 nm. An indium fractional composition of the first III-N layer is greater than 0.1; the second natural lattice constant is at least 1% greater than the first natural lattice constant; a strain-induced lattice constant of the first III-N layer is greater than 1.0055 times the first natural lattice constant; and the second dislocation density is less than 1.5 times the first dislocation density.