Invention Grant
- Patent Title: Method for processing a substrate
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Application No.: US17233382Application Date: 2021-04-16
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Publication No.: US12243742B2Publication Date: 2025-03-04
- Inventor: Seunghyun Lee , Hyunchul Kim , Seungwoo Choi , Yeahyun Gu
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02

Abstract:
Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.
Public/Granted literature
- US20210327714A1 METHOD FOR PROCESSING A SUBSTRATE Public/Granted day:2021-10-21
Information query
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