公开(公告)号：US12243742B2

公开(公告)日：2025-03-04

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： Seunghyun Lee ,  Hyunchul Kim ,  Seungwoo Choi ,  Yeahyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.