Invention Grant
- Patent Title: Quantum cascade laser
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Application No.: US17214084Application Date: 2021-03-26
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Publication No.: US12244121B2Publication Date: 2025-03-04
- Inventor: Kazuue Fujita , Masahiro Hitaka
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP2020-060396 20200330
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/06 ; H01S5/10 ; H01S5/12 ; H01S5/02 ; H01S5/042 ; H01S5/227

Abstract:
A QCL includes a semiconductor substrate and an active layer provided on the semiconductor substrate. The active layer has a cascade structure in which a unit laminate including a light emission layer which generates light and an injection layer to which electrons are transported from the light emission layer is laminated in multiple stages. The light emission layer and the injection layer each have a quantum well structure in which quantum well layers and barrier layers are alternately laminated. A separation layer including a separation quantum well layer having a layer thickness smaller than an average layer thickness of the quantum well layers included in the light emission layer and smaller than an average layer thickness of the quantum well layers included in the injection layer is provided between the light emission layer and the injection layer in the unit laminate.
Public/Granted literature
- US20210305786A1 QUANTUM CASCADE LASER Public/Granted day:2021-09-30
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