- Patent Title: Splash resistant laser wafer singulation by crack length control
-
Application No.: US17537883Application Date: 2021-11-30
-
Publication No.: US12255097B2Publication Date: 2025-03-18
- Inventor: Yang Liu , Hao Zhang , Venkataramanan Kalyanaraman , Joseph O Liu , Qing Ran , Yuan Zhang , Gelline Joyce Untalan Vargas , Jeniffer Otero Aspuria
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Frank D. Cimino
- Main IPC: H01L21/78
- IPC: H01L21/78 ; B23K26/38 ; H01L21/66 ; H01L21/67 ; H01L23/00 ; H01L23/544 ; B23K101/40
Abstract:
A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.
Public/Granted literature
- US20230170257A1 SPLASH RESISTANT LASER WAFER SINGULATION BY CRACK LENGTH CONTROL Public/Granted day:2023-06-01
Information query
IPC分类:
