公开(公告)号：US12255097B2

公开(公告)日：2025-03-18

申请号：US17537883

申请日：2021-11-30

Applicant: Texas Instruments Incorporated

Inventor： Yang Liu ,  Hao Zhang ,  Venkataramanan Kalyanaraman ,  Joseph O Liu ,  Qing Ran ,  Yuan Zhang ,  Gelline Joyce Untalan Vargas ,  Jeniffer Otero Aspuria

IPC: H01L21/78 ,  B23K26/38 ,  H01L21/66 ,  H01L21/67 ,  H01L23/00 ,  H01L23/544 ,  B23K101/40

Abstract: A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.

公开(公告)号：US20230170257A1

公开(公告)日：2023-06-01

申请号：US17537883

申请日：2021-11-30

Applicant: Texas Instruments Incorporated

Inventor： Yang Liu ,  Hao Zhang ,  Venkataramanan Kalyanaraman ,  Joseph O Liu ,  Qing Ran ,  Yuan Zhang ,  Gelline Joyce Untalan Vargas ,  Jeniffer Otero Aspuria

IPC: H01L21/78 ,  H01L21/66 ,  H01L23/544 ,  H01L23/00 ,  H01L21/67 ,  B23K26/38

CPC classification number: H01L21/78 ,  H01L22/12 ,  H01L23/544 ,  H01L23/562 ,  H01L21/67288 ,  H01L21/67115 ,  B23K26/38 ,  B23K2101/40

Abstract: A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.

公开(公告)号：US20230253251A1

公开(公告)日：2023-08-10

申请号：US17669143

申请日：2022-02-10

Applicant: Texas Instruments Incorporated

Inventor： Qing Ran ,  Yang Liu ,  Joseph O. Liu

IPC: H01L21/78 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/268

Abstract: A method of manufacturing a semiconductor package includes forming a plurality of first cuts in a semiconductor wafer. The first cuts extend through a first portion of a thickness of the semiconductor wafer and include a first set of first cuts that are parallel to one another and a second set of first cuts that are parallel to one another and perpendicular to the first set of first cuts. In addition, the method includes forming a plurality of second cuts in the wafer after forming the first cuts. The second cuts are vertically aligned with the first cuts and extend through a second portion of the thickness of the semiconductor wafer. The second cuts include a first set of second cuts that are parallel to one another and a second set of second cuts that are parallel to one another and perpendicular to the first set of second cuts