Invention Grant
- Patent Title: Method for producing a radiation emitting semiconductor chip and radiation emitting semiconductor chip
-
Application No.: US17632523Application Date: 2020-07-10
-
Publication No.: US12255263B2Publication Date: 2025-03-18
- Inventor: Brendan Holland
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE102019121178.6 20190806
- International Application: PCT/EP2020/069501 WO 20200710
- International Announcement: WO2021/023473 WO 20210211
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/20 ; H01L33/60

Abstract:
A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.
Public/Granted literature
- US20220293815A1 METHOD FOR PRODUCING A RADIATION EMITTING SEMICONDUCTOR CHIP AND RADIATION EMITTING SEMICONDUCTOR CHIP Public/Granted day:2022-09-15
Information query
IPC分类: