Invention Grant
- Patent Title: Electrostatic discharge (ESD) protection circuits using tunneling field effect transistor (TFET) and impact ionization MOSFET (IMOS) devices
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Application No.: US18207493Application Date: 2023-06-08
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Publication No.: US12266927B2Publication Date: 2025-04-01
- Inventor: Radhakrishnan Sithanandam
- Applicant: STMicroelectronics International N.V.
- Applicant Address: CH Geneva
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: CH Geneva
- Agency: Crowe & Dunlevy LLC
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L23/528 ; H01L27/02 ; H01L27/06 ; H01L27/12 ; H01L29/06 ; H01L29/08 ; H01L29/739 ; H01L29/78 ; H01L29/87 ; H01L29/73 ; H01L49/02
Abstract:
Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.
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