Invention Grant
- Patent Title: Method for fabricating a fin with minimal length between two single-diffusion break (SDB) trenches
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Application No.: US18206617Application Date: 2023-06-07
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Publication No.: US12278265B2Publication Date: 2025-04-15
- Inventor: Chien-Heng Liu , Chia-Wei Huang , Hsin-Jen Yu , Yung-Feng Cheng , Ming-Jui Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202011276918.0 20201116
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762 ; H01L29/06 ; H01L29/78

Abstract:
A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
Public/Granted literature
- US20230317778A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2023-10-05
Information query
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