公开(公告)号：US20220157933A1

公开(公告)日：2022-05-19

申请号：US17118630

申请日：2020-12-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Heng Liu ,  Chia-Wei Huang ,  Hsin-Jen Yu ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.

公开(公告)号：US11715759B2

公开(公告)日：2023-08-01

申请号：US17118630

申请日：2020-12-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Heng Liu ,  Chia-Wei Huang ,  Hsin-Jen Yu ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.

公开(公告)号：US20230317779A1

公开(公告)日：2023-10-05

申请号：US18206618

申请日：2023-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Heng Liu ,  Chia-Wei Huang ,  Hsin-Jen Yu ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L29/66795 ,  H01L21/76224 ,  H01L29/7851

Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.

公开(公告)号：US20230317778A1

公开(公告)日：2023-10-05

申请号：US18206617

申请日：2023-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Heng Liu ,  Chia-Wei Huang ,  Hsin-Jen Yu ,  Yung-Feng Cheng ,  Ming-Jui Chen

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L29/66795 ,  H01L21/76224 ,  H01L29/7851

Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.