Invention Grant
- Patent Title: Thin film transistor array having a stacked multi-layer metal oxide channel formation region
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Application No.: US17296358Application Date: 2019-11-21
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Publication No.: US12278291B2Publication Date: 2025-04-15
- Inventor: Shunpei Yamazaki , Kentaro Sugaya , Ryota Hodo , Kenichiro Makino , Shuhei Nagatsuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2018-229973 20181207
- International Application: PCT/IB2019/060011 WO 20191121
- International Announcement: WO2020/115595 WO 20200611
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/308 ; H01L27/12 ; H01L29/66
Abstract:
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a plurality of transistors; each of the plurality of transistors includes a first insulator, a first oxide, a second oxide, a first conductor, a second conductor, a third oxide, a second insulator, and a third conductor; the third oxide included in one of the plurality of transistors and the third oxide included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors, are provided to be apart from each other in the channel width direction of the plurality of transistors; the second insulator included in one of the plurality of transistors includes a region continuous with the second insulator included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors; and the third conductor included in one of the plurality of transistors includes a region continuous with the third conductor included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors.
Public/Granted literature
- US20220020881A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-01-20
Information query
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