Invention Grant
- Patent Title: Electrostatic discharge protection for RF pins
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Application No.: US17584990Application Date: 2022-01-26
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Publication No.: US12278486B2Publication Date: 2025-04-15
- Inventor: Gernot Langguth , Christoph Eichenseer , Stefan Kokorovic
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02 ; H02H9/00

Abstract:
A radio frequency integrated circuit (RFIC) device includes: a first RF input/output (I/O) terminal; a second RF I/O terminal, where the first and the second RF I/O terminals are configured to transmit or receive an RF signal; a capacitor coupled between the first and the second RF I/O terminals; a first coil coupled between the first and the second RF I/O terminals, where the first coil is configured to provide ESD protection to the capacitor during a first ESD event; and a fast transient ESD protection circuit coupled between the first and the second RF I/O terminals, where the fast transient ESD protection circuit is configured to provide ESD protection to the capacitor during a second ESD event different from the first ESD event, where a first rise time of the first ESD event is longer than a second rise time of the second ESD event.
Public/Granted literature
- US20230238797A1 Electrostatic Discharge Protection for RF Pins Public/Granted day:2023-07-27
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