Invention Grant
- Patent Title: Thermoelectric material manufacturing method
-
Application No.: US17422362Application Date: 2019-06-12
-
Publication No.: US12279528B2Publication Date: 2025-04-15
- Inventor: Jongrae Lim , Jun Kim , Jooyoung Park , Jeonghun Son , Youngil Jang
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- International Application: PCT/KR2019/007040 WO 20190612
- International Announcement: WO2020/149465 WO 20200723
- Main IPC: H01L35/34
- IPC: H01L35/34 ; B22F3/105 ; B22F3/20 ; B22F9/08 ; H01L35/26 ; H10N10/01 ; H10N10/857 ; H10N10/852

Abstract:
The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material manufacturing method for increasing potential density. The thermoelectric material manufacturing method of the present invention can comprise the steps of: preparing a bulk thermoelectric material by using thermoelectric material raw materials; preparing a powder of the bulk thermoelectric material; adding, to the powder, a metal additive selected from the thermoelectric material raw materials; forming an intermediate in which the metal additive is dispersed in the thermoelectric material; and sintering same at at least the melting point temperature of the metal additive.
Public/Granted literature
- US20220077375A1 THERMOELECTRIC MATERIAL MANUFACTURING METHOD Public/Granted day:2022-03-10
Information query
IPC分类: