Invention Grant
- Patent Title: High dynamic range track and hold amplifier output stage using low voltage devices
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Application No.: US18477058Application Date: 2023-09-28
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Publication No.: US12288587B2Publication Date: 2025-04-29
- Inventor: Gary M. Madison , Kevin Grout
- Applicant: BAE Systems Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Sand, Sebolt & Wernow LPA
- Main IPC: G11C27/02
- IPC: G11C27/02 ; H03K17/60 ; H03K17/687 ; H03K19/0175
Abstract:
A sample and hold amplifier output buffer with the low leakage of metal oxide semiconductor field effect transistors (MOSFET) combined with the linearity and dynamic range of silicon-germanium (SiGe) bipolar junction transistors (BJT). In one aspect, the present disclosure provides a sample and hold amplifier output buffer placing a MOSFET input device between the base and emitter of a high linearity SiGe BJT.
Public/Granted literature
- US20250111881A1 HIGH DYNAMIC RANGE TRACK AND HOLD AMPLIFIER OUTPUT STAGE USING LOW VOLTAGE DEVICES Public/Granted day:2025-04-03
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