Invention Grant
- Patent Title: High dynamic range CMOS image sensor pixel with reduced metal-insulator-metal lateral overflow integration capacitor lag
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Application No.: US18670698Application Date: 2024-05-21
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Publication No.: US12294799B2Publication Date: 2025-05-06
- Inventor: Woon Il Choi
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Perkins Coie LLP
- Agent Daniel L. Jackstadt
- Main IPC: H04N25/75
- IPC: H04N25/75 ; H04N25/59 ; H10F39/00 ; H10F39/18

Abstract:
A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. A drain of the reset transistor is coupled to the bias voltage source. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region is disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to the drain of the reset transistor. The second metal electrode is coupled to a source of the reset transistor and selectively coupled to the floating diffusion.
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