Invention Grant
- Patent Title: Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same
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Application No.: US18219951Application Date: 2023-07-10
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Publication No.: US12300820B2Publication Date: 2025-05-13
- Inventor: Teppei Oguni , Takeshi Osada , Toshihiko Takeuchi , Kuniharu Nomoto
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: NIXON PEABODY LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-124952 20110603,JP2011-125027 20110603
- Main IPC: H01M4/587
- IPC: H01M4/587 ; B82Y30/00 ; B82Y40/00 ; C25D5/48 ; C25D5/50 ; C25D13/02 ; C25D13/12 ; H01M4/04 ; H01M4/133 ; H01M4/1393 ; H01M4/66 ; H01M4/70

Abstract:
Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.
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