发明申请
- 专利标题： Method for producing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US09748436申请日： 2000-12-26
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公开(公告)号： US20010021572A1公开(公告)日： 2001-09-13
- 发明人: Kenzi Orita , Masahiro Ishida , Masaaki Yuri
- 申请人： Matsushita Electronics Corporation
- 申请人地址： null
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： null
- 优先权： JP11-369871 19991227; JP2000-027453 20000204
- 主分类号： H01L021/00
- IPC分类号： H01L021/00 ; C30B001/00 ; H01L021/36 ; H01L021/477
摘要：
A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.
公开/授权文献
- US06673702B2 Method for producing a semiconductor device 公开/授权日：2004-01-06
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