Invention Application
US20010025929A1 Secondary electron filtering method, defect detection method and device manufacturing method using the same method
审中-公开
二次电子滤波方法，缺陷检测方法和使用相同方法的器件制造方法
- Patent Title: Secondary electron filtering method, defect detection method and device manufacturing method using the same method
- Patent Title (中): 二次电子滤波方法，缺陷检测方法和使用相同方法的器件制造方法
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Application No.: US09818226Application Date: 2001-03-28
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Publication No.: US20010025929A1Publication Date: 2001-10-04
- Inventor: Mamoru Nakasuji
- Priority: JP2000-135249 20000331
- Main IPC: G01K001/08
- IPC: G01K001/08 ; H01J003/14 ; H01J003/26
Abstract:
If a conventional mesh filter is used for a voltage contrast measurement on a specimen surface, aberrations that is difficult to correct in a primary electron (PE) beam are generated and then it is difficult to obtain a fine focused beam. An axially symmetric electrode is placed between the secondary electron (SE) detector and the specimen. Through an adjustment for an applied voltage in the electrode, a potential on the optical axis above the specimen is adjusted so that a passage or non-passage of the SEs can be controlled.
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