Invention Application
- Patent Title: Method for manufacturing semiconductor dynamic quantity sensor
- Patent Title (中): 制造半导体动态量传感器的方法
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Application No.: US09861535Application Date: 2001-05-22
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Publication No.: US20010029060A1Publication Date: 2001-10-11
- Inventor: Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
- Applicant: DENSO Corporation
- Applicant Address: null
- Assignee: DENSO Corporation
- Current Assignee: DENSO Corporation
- Current Assignee Address: null
- Priority: JP10-126288 19980508; JP10-369840 19981225; JP11-41967 19990219
- Main IPC: H01L021/00
- IPC: H01L021/00

Abstract:
In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.
Public/Granted literature
- US06423563B2 Method for manufacturing semiconductor dynamic quantity sensor Public/Granted day:2002-07-23
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