公开(公告)号：US20010029060A1

公开(公告)日：2001-10-11

申请号：US09861535

申请日：2001-05-22

Applicant: DENSO Corporation

Inventor： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC: H01L021/00

CPC classification number: B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

Abstract: In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

Abstract translation: 在半导体加速度传感器的制造方法中，通过蚀刻单晶硅薄膜和硅两者，通过绝缘膜在设置在硅晶片上的单晶硅薄膜中形成包括质量部分和可移动电极的可移动部分 晶圆。 在这种情况下，可移动部分最终限定在在气相气氛中进行的可动部分限定步骤。 因此，在制造过程中，由于蚀刻剂，防止可动部分粘附到其它区域。