A method for manufacturing an electronic device comprising an organic-containing material (3) comprises the steps of: covering the organic-containing material (3) with a SiO2 layer (4), applying a SiN layer (5) to the SiO2 layer (4), applying and patterning a resist layer (6), etching through the SiN layer (5) by means of an etch process wherein SiN is etched faster than SiO2, removing the resist (6), etching through the SiO2 layer (4) by means of an etch process wherein SiO2 is etched faster than SiN, removing the SiN layer (5), etching the organic dielectric material (3) using the SiO2 layer (4) as a mask.