Invention Application
US20010055220A1 Voltage regulation device for reference cell of a dynamic random access memory, reference cell, memory and associated process 审中-公开
用于动态随机存取存储器,参考单元,存储器和相关过程的参考单元的电压调节装置

  • Patent Title: Voltage regulation device for reference cell of a dynamic random access memory, reference cell, memory and associated process
  • Patent Title (中): 用于动态随机存取存储器,参考单元,存储器和相关过程的参考单元的电压调节装置
  • Application No.: US09853254
    Application Date: 2001-05-11
  • Publication No.: US20010055220A1
    Publication Date: 2001-12-27
  • Inventor: Richard Ferrant
  • Applicant: STMicroelectronics S.A.
  • Applicant Address: FR Montrouge
  • Assignee: STMicroelectronics S.A.
  • Current Assignee: STMicroelectronics S.A.
  • Current Assignee Address: FR Montrouge
  • Priority: FR0007521 20000613
  • Main IPC: G11C011/24
  • IPC: G11C011/24 H03H011/26
Voltage regulation device for reference cell of a dynamic random access memory, reference cell, memory and associated process
Abstract:
A voltage regulation device is for a reference cell of a dynamic random access memory arranged in lines and columns and including a plurality of memory cells. The device includes at least one capacitor of a predetermined capacitance which can be discharged during memory access.
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