Invention Application
US20020045350A1 COMPOSITION FOR POLISHING A SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
有权
用于抛光半导体器件的组合物及其制造使用该半导体器件的半导体器件的方法
- Patent Title: COMPOSITION FOR POLISHING A SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- Patent Title (中): 用于抛光半导体器件的组合物及其制造使用该半导体器件的半导体器件的方法
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Application No.: US09953127Application Date: 2001-09-17
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Publication No.: US20020045350A1Publication Date: 2002-04-18
- Inventor: Takanori Kido , Kagetaka Ichikawa
- Applicant: SHOWA DENKO K.K.
- Applicant Address: null
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: null
- Priority: JP10-42288 19980224
- Main IPC: H01L021/302
- IPC: H01L021/302
Abstract:
An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of nullCOOH, nullCOOMx (wherein Mx is an atom or a functional group capable of substituting a H atom to form a salt), nullSO3H or nullSO3Mx, (wherein My is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition.
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