A multilevel nonvolatile memory includes a supply line supplying a supply voltage, a voltage boosting circuit supplying a boosted voltage, higher than the supply voltage, a boosted line connected to the voltage boosting circuit and a reading circuit including at least one comparator. The comparator includes a first and a second input, a first and a second output, at least one amplification stage connected to the boosted line, and a boosted line latch stage connected to the supply line.