发明申请
- 专利标题： Method and apparatus for forming deposition film, and method for treating substrate
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申请号： US10195543申请日： 2002-07-16
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公开(公告)号： US20030010623A1公开(公告)日： 2003-01-16
- 发明人: Hideo Tamura , Masahiro Kanai , Yasuyoshi Takai , Hiroshi Shimoda , Hidetoshi Tsuzuki
- 申请人： Canon Kabushiki Kaisha
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 优先权： JP131900/2000 20000501; JP131533/2001 20010427
- 主分类号： C23C014/32
- IPC分类号： C23C014/32 ; C25B013/00
摘要：
A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.
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