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公开(公告)号：US20040149330A1
公开(公告)日：2004-08-05
申请号：US10704693
申请日：2003-11-12
IPC分类号： H01L025/00
CPC分类号： H01L31/076 , Y02E10/548
摘要： Provided is a stacked photovoltaic device characterized in that: a first i-type semiconductor layer comprises amorphous silicon hydride, and second and subsequent i-type semiconductor layers comprise amorphous silicon hydride or microcrystalline silicon, the i-type semiconductor layers being stacked in order from a light incidence side; and when an open circuit voltage is assigned Voc in the case where a pin photoelectric single element is manufactured using a pin element having the i-type semiconductor layer made of microcrystalline silicon of pin elements having the second and subsequent i-type semiconductor layers, respectively, and a layer thickness of the i-type semiconductor layer concerned is assigned t, a short-circuit photoelectric current density of the stacked photovoltaic device is controlled by the pin element including the i-type semiconductor layer having the largest value of Voc/t.
摘要翻译： 本发明提供一种层叠型光伏器件，其特征在于：第一i型半导体层包括非晶硅氢化物，第二和随后的i型半导体层包括非晶硅氢化物或微晶硅，i型半导体层按 光入射侧; 并且在使用具有由具有第二和随后的i型半导体层的引脚元件的微晶硅制成的具有i型半导体层的引脚元件来制造引脚光电单元的情况下分配Voc的开路电压分别为Voc ，并且分配有关的i型半导体层的层厚度，堆叠的光伏器件的短路光电流密度由包括具有最大值Voc / t的i型半导体层的引脚元件控制 。
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公开(公告)号：US20040221887A1
公开(公告)日：2004-11-11
申请号：US10833125
申请日：2004-04-28
发明人： Takaharu Kondo , Masafumi Sano , Yasuyoshi Takai , Makoto Higashikawa , Hidetoshi Tsuzuki , Tetsuro Nakamura
IPC分类号： H01L031/00
CPC分类号： H01L31/0745 , H01L31/0747 , H01L31/076 , Y02E10/548
摘要： The present invention provides a photovoltaic element including a structure with a first pin-junction having an i-type semiconductor layer made of amorphous silicon and a second pin-junction having an i-type semiconductor layer contains crystalline silicon which are arranged in series on a substrate, wherein the first pin-junction has a first intermediate layer at a p/i interface and a second intermediate layer at an n/i interface, and the second pin-junction has a third intermediate layer at a p/i interface and a fourth intermediate layer at an n/i interface, and wherein the second intermediate layer and the third intermediate layer are made of amorphous silicon and the first intermediate layer and the fourth intermediate layer contain crystalline silicon, or wherein the second intermediate layer and the third intermediate layer contain crystalline silicon and the first intermediate layer and the fourth intermediate layer are made of amorphous silicon.
摘要翻译： 本发明提供了一种光电元件，其包括具有由非晶硅制成的i型半导体层的第一pin结和具有i型半导体层的第二pin-junction结构的结构，所述i型半导体层包含晶体硅，该晶体硅串联在 衬底，其中所述第一pin结在ap / i界面具有第一中间层，在n / i界面具有第二中间层，并且所述第二pin-junction在ap / i界面具有第三中间层，并且第四中间体 层，其中第二中间层和第三中间层由非晶硅制成，第一中间层和第四中间层含有结晶硅，或者其中第二中间层和第三中间层含有 晶体硅和第一中间层和第四中间层由非晶硅制成。
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公开(公告)号：US20030188680A1
公开(公告)日：2003-10-09
申请号：US10397310
申请日：2003-03-27
IPC分类号： C30B019/00
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , Y02E10/546 , Y02P70/521
摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.
摘要翻译： 一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤 将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。 所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。
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公开(公告)号：US20030010623A1
公开(公告)日：2003-01-16
申请号：US10195543
申请日：2002-07-16
IPC分类号： C23C014/32 , C25B013/00
CPC分类号： C23C14/564 , C23C14/562 , H01L31/20 , Y02E10/50
摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.
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