Invention Application
- Patent Title: Mute switch
- Patent Title (中): 静音开关
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Application No.: US10147436Application Date: 2002-05-15
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Publication No.: US20030016836A1Publication Date: 2003-01-23
- Inventor: Tahir Rashid
- Applicant: STMicroelectronics Limited
- Applicant Address: GB Buckinghamshire
- Assignee: STMicroelectronics Limited
- Current Assignee: STMicroelectronics Limited
- Current Assignee Address: GB Buckinghamshire
- Priority: EP01304303.9 20010515
- Main IPC: H04B015/00
- IPC: H04B015/00

Abstract:
A mute switch including a field effect transistor receiving a mute control signal at its gate for selectively supplying an audio signal from an input node to an output node. A bipolar transistor is connected between the input node and the FET for reducing the voltage level of the audio signal prior to its application to the input node, and a further bipolar transistor is connected between the FET and the output node for raising the voltage level of the audio signal prior to its application to the output node. This serves to maintain the DC bias level of the audio output signal independently of the status of the mute control signal.
Public/Granted literature
- US07187774B2 Mute switch Public/Granted day:2007-03-06
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