发明申请
US20030116782A1 Semiconductor device and its manufacturing method capable of reducing low frequency noise
审中-公开
能够降低低频噪声的半导体装置及其制造方法
- 专利标题： Semiconductor device and its manufacturing method capable of reducing low frequency noise
- 专利标题（中）： 能够降低低频噪声的半导体装置及其制造方法
-
申请号： US10318065申请日： 2002-12-13
-
公开(公告)号： US20030116782A1公开(公告)日： 2003-06-26
- 发明人: Hiroshi Mizutani
- 申请人： NEC CORPORATION
- 申请人地址： null
- 专利权人： NEC CORPORATION
- 当前专利权人： NEC CORPORATION
- 当前专利权人地址： null
- 优先权： JP355113/1999 19991214
- 主分类号： H01L021/338
- IPC分类号： H01L021/338 ; H01L031/0328 ; H01L021/28
摘要：
In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconductor layer. A first electrode is formed on the third semiconductor layer, and a second electrode is formed on the first semiconductor layer in contact with the second semiconductor layer and apart from the semiconductor layer, thus forming a diode.
信息查询
