发明申请
- 专利标题： In situ application of etch back for improved deposition into high-aspect-ratio features
- 专利标题（中）： 回蚀刻的原位应用可以改善沉积到高纵横比特征
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申请号： US10057014申请日： 2002-01-24
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公开(公告)号： US20030136332A1公开(公告)日： 2003-07-24
- 发明人: Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
- 申请人： APPLIED MATERIALS INC., A Delaware corporation
- 申请人地址： CA Santa Clara
- 专利权人： APPLIED MATERIALS INC., A Delaware corporation
- 当前专利权人： APPLIED MATERIALS INC., A Delaware corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： C30B023/00
- IPC分类号： C30B023/00 ; C30B025/00 ; C30B028/12 ; C30B028/14
摘要：
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
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