公开(公告)号：US20040250753A1

公开(公告)日：2004-12-16

申请号：US10302126

申请日：2002-11-22

发明人： Sung Gu Kang ,  Craig Bae

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B25/00 ,  B82Y30/00 ,  C30B29/605 ,  C30B33/12 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

摘要： Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

摘要翻译： 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管已经生长之后，对新形成的纳米管结构进行后处理步骤。 后处理从生长的纳米管的壁上除去石墨和其他碳颗粒，并控制纳米管层的厚度。 在相同基板温度下用等离子体进行后处理。 对于后处理，使用含氢气体作为等离子体源气体。 在从纳米管生长步骤到后处理步骤的过渡期间，等离子体处理室中的压力用上述净化气体稳定，而不关闭室中的等离子体。 这样就不需要清洗和排空等离子体处理室。

公开(公告)号：US20040244676A1

公开(公告)日：2004-12-09

申请号：US10490337

申请日：2004-03-22

发明人： Alexander Schnell ,  Cyrille Bezencon ,  Matthias Hoebel ,  Abdus Suttar Khan ,  Maxim Konter ,  Wilfried Kurz

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C26/02 ,  C23C24/10 ,  C30B13/00 ,  C30B29/52 ,  Y10S428/926 ,  Y10S428/939 ,  Y10T428/12493 ,  Y10T428/12861 ,  Y10T428/12937 ,  Y10T428/12944

摘要： A gas turbine component consists of a superalloy base material with a single crystal structure and a protective MCrAlY-coating. The MCrAlY-coating the MCrAlY has a null/null-phase and single crystal structure, which is epitaxial with the base material.

摘要翻译： 燃气轮机组件由具有单晶结构的超级合金基材和保护性MCrAlY涂层组成。 MCrAlY涂层MCrAlY具有γ/β相和单晶结构，其与基底材料外延。

公开(公告)号：US20040231583A1

公开(公告)日：2004-11-25

申请号：US10872365

申请日：2004-06-22

发明人： Kazukuni Hara ,  Masao Nagakubo ,  Shoichi Onda

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B25/00 ,  C30B29/36 ,  Y10S117/90 ,  Y10T117/10

摘要： A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

摘要翻译： 具有第一和第二圆柱体的坩埚设置在下腔室中。 基座设置在第一构件的内部，并且晶种固定到基座。 在入口导管和坩埚之间设置第二隔热件。 第一隔热件设置在入口导管的中间部分。 利用这些隔热绝热体，入口导管在其更接近坩埚的部分处发生温度梯度。 将混合气体引入坩埚中。 混合气体在通过入口导管时逐渐加热，并被引入坩埚中以形成高质量的SiC单晶。

公开(公告)号：US20040221800A1

公开(公告)日：2004-11-11

申请号：US10857477

申请日：2004-06-01

申请人： Tokyo Electron Limited

发明人： Toshihiro Yanase

IPC分类号： C30B028/12 ,  C30B023/00 ,  C30B025/00 ,  C30B028/14

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： In a plasma processing apparatus according to the present invention, a gas inlet port and a discharge port are provided on a chamber for introducing and discharging gas into and from the chamber respectively. A sample to be etched is placed on an electrode part, so that a high-frequency power source applies a high-frequency bias to the sample. An electromagnet provided on the periphery of a plasma generation area generates a magnetic field while a waveguide connected to an upper potion of the chamber introduces a microwave into the plasma generation area through a microwave introduction window. Electron cyclotron resonance is excited for the gas for generating plasma. At least a surface of the microwave introduction window exposed to the plasma generation area is made of quartz, while the gas contains fluorine. The apparatus having the aforementioned structure can remove a material adhering to the surface of the microwave introduction window when the sample is etched.

公开(公告)号：US20040216660A1

公开(公告)日：2004-11-04

申请号：US10734543

申请日：2003-12-12

发明人： Jin Soo Kim ,  Won Seok Han ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Dae Kon Oh

IPC分类号： C30B023/00 ,  C30B001/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B23/02 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/02 ,  C30B29/40

摘要： Provided is a method of forming quantum dots in which the quantum dots are formed on a thin InxGa1-xAs strained layer. The In(Ga)As quantum dots can be applied to an active layer of an optical device such as a laser diode or an optical detector.

摘要翻译： 提供了一种形成量子点的方法，其中量子点形成在薄的In x Ga 1-x As应变层上。 In（Ga）As量子点可以应用于诸如激光二极管或光学检测器的光学器件的有源层。

公开(公告)号：US20040211357A1

公开(公告)日：2004-10-28

申请号：US10422760

申请日：2003-04-24

发明人： Pradad N. Gadgil ,  Shmuel Erez

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/54 ,  H01L21/76877

摘要： This invention relates to process sequence by atomic layer chemical vapor processing that includes thin film deposition for diffusion barriers in the vias, trenches or contact plug-holes followed by gap fill with ALD/CVD process and subsequent removal of the blanket film on the top by Atomic Layer Processing/Chemical Vapor Processing. The processes can be carried out in separate chambers or may be combined into one or more chambers. The apparatus employed in these processing steps allows the practitioner to rapidly complete process sequences of barrier deposition, gap fill and top layer planarization. In case of copper metallization scheme, ALD gap fill can be employed to replace electrochemical deposition of copper. Atomic layer removal of copper and other blanket films by gas phase reactions can replace the chemical-mechanical-polishing of the blanket films. Additional advantages of such processing scheme are elimination of defects, dishing, erosion, corrosion, liquid-electrolyte, slurry and other liquid waste. Benefit of such a process scheme is entrapment of the effluents and also precise metering and control of the injected amount to affect the chemical reaction in each step of the sequence that can lead to significant savings and higher chemical utilization efficiency.

摘要翻译： 本发明涉及通过原子层化学气相处理的工艺顺序，其包括用于通孔，沟槽或接触插塞孔中的扩散阻挡层的薄膜沉积，随后用ALD / CVD工艺进行间隙填充，随后通过顶部由 原子层处理/化学气相处理。 该方法可以在单独的室中进行，或者可以组合成一个或多个室。 在这些处理步骤中使用的装置允许从业者快速完成阻挡层沉积，间隙填充和顶层平面化的处理序列。 在铜金属化方案的情况下，可以采用ALD间隙填充来替代铜的电化学沉积。 通过气相反应原子层去除铜和其他覆盖膜可以代替橡皮布膜的化学机械抛光。 这种处理方案的另外的优点是消除缺陷，凹陷，侵蚀，腐蚀，液体电解质，浆料和其它废液。 这种处理方案的益处是捕获流出物，并且精确计量和控制注入​​量以影响序列的每个步骤中的化学反应，这可以显着节省和更高的化学品利用效率。

公开(公告)号：US20040211356A1

公开(公告)日：2004-10-28

申请号：US08799506

申请日：1997-02-12

发明人： SHUNPEI YAMAZAKI ,  HIROYUKI SHIMADA ,  AKIRA TAKENOUCHI ,  YASUHIKO TAKEMURA

IPC分类号： C30B023/00

CPC分类号： H01L21/67173 ,  C23C14/48 ,  C23C14/5813 ,  C23C16/56 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67213 ,  Y10S438/908

摘要： A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.

摘要翻译： 一种用于在制造半导体集成电路的半导体器件中提供高度清洁度的工艺的多室系统。 该系统包括用于制造半导体器件的多个真空装置（例如，成膜装置，蚀刻装置，热处理装置和预备室）。 这些真空装置中的至少一个是激光。

公开(公告)号：US20040206298A1

公开(公告)日：2004-10-21

申请号：US10842749

申请日：2004-05-11

发明人： Jason Ronald Jenny ,  David Phillip Malta ,  Hudson McDonald Hobgood ,  Stephan Mueller ,  Valeri F. Tsvetkov

IPC分类号： H01L031/0312 ,  C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： H01L21/324 ,  C30B29/36 ,  C30B33/00

摘要： A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.

公开(公告)号：US20040200406A1

公开(公告)日：2004-10-14

申请号：US10410204

申请日：2003-04-10

发明人： Andrzej Peczalski ,  Thomas E. Nohava

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AlN on the Si substrate and a plurality of GaN layers and AlN layers deposited alternatively on the top of the AlN buffer layer. By controlling the deposition conditions and timings of the plurality of GaN layers and AlN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits.

公开(公告)号：US20040194692A1

公开(公告)日：2004-10-07

申请号：US10809712

申请日：2004-03-26

发明人： Hideshi Nishikawa ,  Nobumitsu Takase ,  Kazuyuki Egashira ,  Hiroshi Hayakawa

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/14 ,  C30B025/00 ,  C30B028/10 ,  C30B028/12 ,  C30B023/00 ,  C30B030/04

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225 ,  Y10T428/21

摘要： A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1null1014 atoms/cm3, COP defects having a size of 0.1 nullm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 nullm or more, oxygen precipitates at a density of 1null104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1null1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.

摘要翻译： 具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片，并且可以通过将具有小于1×10 14原子/分钟的浓度的氮的基材晶片退火来制备内部的足够均匀的BMD密度， cm 3，COP最高发生频率为0.1μm以下的COP缺陷，没有大小为0.2μm以上的COP缺陷，氧浓度为1×10 4个/ cm 2的析出物 以上，BMD（氧析出物），其中晶片的径向BMD密度的最大值与最小值的比例为3以下，或者在特定温度范围内以特定平均温度梯度生长的基材晶片 以及在小于1×10 14原子/ cm 3的氮浓度下的单晶的比冷却时间，使用Czochralski法。 此外，可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。 硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率，从而能够提高器件的生产率。