专利检索 ap:("APPLIED MATERIALS INC., A Delaware corporation") AND inv:"Canfeng Lai" 第 1 页

1.

发明申请
In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征

公开(公告)号：US20030136332A1

公开(公告)日：2003-07-24

申请号：US10057014

申请日：2002-01-24

申请人： APPLIED MATERIALS INC., A Delaware corporation

发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian

IPC分类号： C30B023/00 , C30B025/00 , C30B028/12 , C30B028/14

CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。