- 专利标题: Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
-
申请号: US10445826申请日: 2003-05-28
-
公开(公告)号: US20030207475A1公开(公告)日: 2003-11-06
- 发明人: Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
- 申请人: EBARA CORPORATION , NIKON CORPORATION
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: EBARA CORPORATION,NIKON CORPORATION
- 当前专利权人: EBARA CORPORATION,NIKON CORPORATION
- 当前专利权人地址: JP Tokyo JP Tokyo
- 优先权: JP336305/2000 20001102; JP335833/2000 20001102; JP337370/2000 20001106; JP337491/2000 20001106; JP350935/2000 20001117; JP352720/2000 20001120; JP353831/2000 20001121; JP355294/2000 20001122; JP362752/2000 20001129; JP364556/2000 20001130; JP5140/2001 20010112; JP31901/2001 20010208; JP31906/2001 20010208; JP33599/2001 20010209; JP106656/2001 20010405; JP134981/2001 20010502; JP158571/2001 20010528
- 主分类号: H01L021/66
- IPC分类号: H01L021/66
摘要:
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
公开/授权文献
信息查询