摘要:
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
摘要:
Electron microscopes (e.g., scanning electron microscopes, mapping SEMs) are disclosed in which the amount of charging of the specimen is controlled to between a minimum amount needed to view an image and a maximum amount beyond which a viewable image cannot be obtained, and such that the image has low distortion and the specimen is not damaged. Multiple irradiation-electron beams, or multiple segments of a single irradiation-electron beam, are directed to a specimen surface. The irradiation beams (or segments) are decelerated by a retarding voltage applied by a cathode lens and are incident on the specimen surface. The respective current and incident energy of each irradiation beam (or segment thereof) are controlled independently to a predetermined relationship so as to impart predetermined amounts of charging to different insulator regions of the specimen.
摘要:
Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation-optical system, and enters a Wien filter (nullEnullBnull). Upon passing through the EnullB, the irradiation beam passes through an objective-optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective-optical system and the EnullB in a different direction to a detector via an imaging-optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the EnullB. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB-optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the EnullB is in the same position as the image formed on the detector when electrical voltage and current are applied to the EnullB. Also provided are nullevaluation chartsnull for use in such alignments that do not require adjustment of the optical axis of the irradiation-optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.