Invention Application
- Patent Title: Field emission device
- Patent Title (中): 场发射装置
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Application No.: US10686678Application Date: 2003-10-17
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Publication No.: US20040080260A1Publication Date: 2004-04-29
- Inventor: Shang-hyeun Park , Hang-woo Lee , You-jong Kim , Pil-soo Ahn
- Applicant: Samsung SDI Co., Ltd.
- Applicant Address: KR Kyungki-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Kyungki-do
- Priority: KR2002-64345 20021021
- Main IPC: H01J001/62
- IPC: H01J001/62 ; H01J063/04

Abstract:
Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.
Public/Granted literature
- US07233102B2 Field emission device with gate having cylindrical part Public/Granted day:2007-06-19
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