Field emission device
    1.
    发明申请
    Field emission device 失效
    场发射装置

    公开(公告)号:US20040027052A1

    公开(公告)日:2004-02-12

    申请号:US10635647

    申请日:2003-08-07

    CPC classification number: H01J3/022 H01J1/3042 H01J9/025

    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.

    Abstract translation: 提供场发射装置(FED)和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端以及栅电极上的聚焦栅电极,其中栅电极的一个或多个栅极通过聚焦栅电极的单个开口露出。 在FED中,电弧的发生被抑制。 虽然在FED中发生电弧,但是可以防止阴极和电阻层的损坏,从而可以向阳极施加较高的工作电压。 此外,由于具有纳米尺寸表面特征的微尖端,FED的发射电流密度增加,从而可以用FED实现高亮度显示。 由于微型尖端作为纳米级尖端的集合,可以降低栅极导通电压,从而降低功耗。

    Field emission display with double gate structure and method of manufacturing therefor
    2.
    发明申请
    Field emission display with double gate structure and method of manufacturing therefor 失效
    双栅结构的场发射显示及其制造方法

    公开(公告)号:US20040140489A1

    公开(公告)日:2004-07-22

    申请号:US10755348

    申请日:2004-01-13

    Abstract: A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.

    Abstract translation: 提供具有双栅极结构的场发射显示器及其制造方法。 场致发射显示器包括衬底,形成在衬底上的阴极层,形成在衬底上的栅绝缘层和阴极层,并且具有暴露阴极层的一部分的空腔,设置在阴极层上的场发射体 阴极层暴露在空腔的底部,形成在栅极绝缘层中的第一栅极层,其中形成直径大于空腔的直径的第一栅极孔不暴露于 空腔和第二栅极层,其形成在栅极绝缘层上,并且在与空腔对应的部分中形成有第二栅极孔。

    Field emission device
    3.
    发明申请
    Field emission device 失效
    场发射装置

    公开(公告)号:US20040080260A1

    公开(公告)日:2004-04-29

    申请号:US10686678

    申请日:2003-10-17

    CPC classification number: B82Y10/00 H01J3/022 H01J9/025

    Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.

    Abstract translation: 提供了使用碳纳米管的场致发射器件。 场致发射器件包括衬底,阴极,栅极绝缘层,电子发射体和栅电极。 阴极形成在基板上。 栅绝缘层形成在阴极上并具有暴露阴极的一部分的良好的孔。 电子发射体形成在阴极的暴露部分上。 栅电极形成在栅极绝缘层上并具有与阱对应的栅极孔。 栅电极还包括圆柱形电极部分,其从门孔朝向电子束的前进路径形成聚焦电场。 因此,可以在从电子发射体发射的电子束周围形成聚焦电场,以使通过聚焦电场的电子束会聚并聚焦。 结果,可以提高色纯度,亮度和耐久性。

    Field emission device
    4.
    发明申请
    Field emission device 失效
    场发射装置

    公开(公告)号:US20040135490A1

    公开(公告)日:2004-07-15

    申请号:US10743799

    申请日:2003-12-24

    CPC classification number: H01J29/467 H01J31/127

    Abstract: A field emission device for displaying images with good quality is provided. The field emission device includes an anode plate, an anode electrode and a phosphor layer are formed inside of the anode plate, a cathode plate, a plurality of electron emission sources for emitting electrons which correspond to the phosphor layer and a gate electrode having gate holes through which the electrons pass are formed inside of the cathode plate, a mesh grid which is provided between the cathode plate and the anode plate and in which a plurality of electron-controlling holes are formed in a region corresponding to the gate holes, a spacer which supports the mesh grid between the anode plate and the mesh grid, and insulating layers which are formed on both sides of the mesh grid and have windows through which the plurality of electron-controlling holes are exposed and which correspond to a region where the plurality of electron-controlling holes are formed.

    Abstract translation: 提供了用于显示质量好的图像的场致发射装置。 场致发射器件包括在阳极板内部形成阳极板,阳极电极和荧光体层,阴极板,用于发射与荧光体层相对应的电子的多个电子发射源和具有栅极孔的栅电极 电子通过的电子通过其形成在阴极板的内部,网格设置在阴极板和阳极板之间,并且在与栅极孔相对应的区域中形成有多个电子控制孔,间隔件 其支撑在阳极板和网格之间的网格,以及形成在网状网格的两侧上并具有多个电子控制孔的窗户的绝缘层,并且其中多个电子控制孔的多个 的电子控制孔。

    Method of manufacturing triode carbon nanotube field emitter array
    5.
    发明申请
    Method of manufacturing triode carbon nanotube field emitter array 失效
    制造三极管碳纳米管场发射极阵列的方法

    公开(公告)号:US20020094494A1

    公开(公告)日:2002-07-18

    申请号:US10035438

    申请日:2002-01-04

    CPC classification number: B82Y10/00 H01J9/022 H01J2201/30469

    Abstract: A method of manufacturing a field emitter array using carbon nanotubes, low voltage field emission material, is provided. The method includes the steps of (a) forming a conductive thin film layer on the top of a transparent substrate having a transparent electrode and exposing a predetermined portion of the transparent electrode; (b) forming an opaque thin film layer on the exposed predetermined portion of the transparent electrode; (c) depositing an insulation material on the entire top surface of the transparent substrate and removing the insulation material from the top surfaces of the conductive thin film layer and the opaque thin film layer, thereby forming an insulation layer; (d) forming a gate layer on the top of the insulation layer; and (e) removing the opaque thin film layer and forming carbon nanotube tips on the top of the exposed transparent electrode. Accordingly, the triode carbon nanotube field emitter array can be easily manufactured using a small number of mask layers and without using a special aligner.

    Abstract translation: 提供了使用碳纳米管制造场致发射体阵列的方法,即低电压场发射材料。 该方法包括以下步骤:(a)在具有透明电极的透明基板的顶部上形成导电薄膜层,并暴露出透明电极的预定部分; (b)在所述透明电极的暴露的预定部分上形成不透明薄膜层; (c)在透明基板的整个顶表面上沉积绝缘材料,并从导电薄膜层和不透明薄膜层的顶表面去除绝缘材料,由此形成绝缘层; (d)在绝缘层的顶部上形成栅极层; 和(e)去除不透明薄膜层并在暴露的透明电极的顶部上形成碳纳米管尖端。 因此,可以使用少量掩模层容易地制造三极管碳纳米管场发射极阵列,并且不使用特殊的对准器。

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