Invention Application
US20040086793A1 High resolution overlay alignment systems for imprint lithography
有权
用于压印光刻的高分辨率覆盖对齐系统
- Patent Title: High resolution overlay alignment systems for imprint lithography
- Patent Title (中): 用于压印光刻的高分辨率覆盖对齐系统
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Application No.: US10445863Application Date: 2003-05-27
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Publication No.: US20040086793A1Publication Date: 2004-05-06
- Inventor: S. V. Sreenivasan , Byung J. Choi , Matthew Colbum , Todd Bailey
- Applicant: University of Texas System Board of Regents, UT System
- Applicant Address: TX Austin
- Assignee: University of Texas System Board of Regents, UT System
- Current Assignee: University of Texas System Board of Regents, UT System
- Current Assignee Address: TX Austin
- Main IPC: G03F009/00
- IPC: G03F009/00 ; G03C005/00 ; B41L007/00 ; B41L009/00 ; B41F007/00 ; B41L011/00 ; B41L001/00 ; G03B017/00
Abstract:
A method of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.
Public/Granted literature
- US06919152B2 High resolution overlay alignment systems for imprint lithography Public/Granted day:2005-07-19
Information query
