发明申请
- 专利标题： Isolation structures for imposing stress patterns
- 专利标题（中）： 施加应力模式的隔离结构
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申请号： US10318600申请日： 2002-12-12
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公开(公告)号： US20040113174A1公开(公告)日： 2004-06-17
- 发明人: Dureseti Chidambarrao , Omer H. Dokumaci , Bruce B. Doris , Jack A. Mandelman
- 申请人： International Business Machines Corporation
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L031/109
- IPC分类号： H01L031/109
摘要：
A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate STI fill material. The STI regions are formed in the substrate layer and impose forces on adjacent substrate areas. The substrate areas under compression or tension exhibit charge mobility characteristics different from those of a non-stressed substrate. By controllably varying these stresses within NFET and PFET devices formed on a substrate, improvements in IC performance are achieved.
公开/授权文献
- US06974981B2 Isolation structures for imposing stress patterns 公开/授权日：2005-12-13
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