发明申请
- 专利标题: Testable electrostatic discharge protection circuits
- 专利标题(中): 可测试的静电放电保护电路
-
申请号: US10423177申请日: 2003-04-24
-
公开(公告)号: US20040119118A1公开(公告)日: 2004-06-24
- 发明人: Richard K. Williams , Michael E. Cornell , Wai Tien Chan
- 申请人: Advanced Analogic Technologies, Inc. , Advanced Analogic Technologies (Hong Kong) Limited
- 申请人地址: null null
- 专利权人: Advanced Analogic Technologies, Inc.,Advanced Analogic Technologies (Hong Kong) Limited
- 当前专利权人: Advanced Analogic Technologies, Inc.,Advanced Analogic Technologies (Hong Kong) Limited
- 当前专利权人地址: null null
- 主分类号: H01L023/62
- IPC分类号: H01L023/62 ; H01L021/66 ; H01L021/8234
摘要:
A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.
公开/授权文献
- US06906386B2 Testable electrostatic discharge protection circuits 公开/授权日:2005-06-14
信息查询