发明申请
US20040121269A1 Method for reworking a lithographic process to provide an undamaged and residue free arc layer
失效
对光刻工艺进行再加工以提供无损和无残留弧的层的方法
- 专利标题： Method for reworking a lithographic process to provide an undamaged and residue free arc layer
- 专利标题（中）： 对光刻工艺进行再加工以提供无损和无残留弧的层的方法
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申请号： US10323376申请日： 2002-12-18
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公开(公告)号： US20040121269A1公开(公告)日： 2004-06-24
- 发明人: Ai-Sen Liu , Chun-Hsien Lin
- 申请人： Taiwan Semiconductor Manufacturing Co.; Ltd.
- 申请人地址： null
- 专利权人： Taiwan Semiconductor Manufacturing Co.; Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.; Ltd.
- 当前专利权人地址： null
- 主分类号： G03F007/42
- IPC分类号： G03F007/42 ; B08B003/04
摘要：
A method of removing resinous organic material over a semiconductor process surface including providing a semiconductor wafer having a process surface comprising a resinous organic material; and, exposing the process surface to a supercritical CO2 containing medium further comprising at least a first solvent for a predetermined period to produce a substantially resinous organic material free and undamaged process surface.
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