- 专利标题： Method for treating semiconductor processing components and components formed thereby
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申请号： US10414563申请日： 2003-04-15
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公开(公告)号： US20040209445A1公开(公告)日： 2004-10-21
- 发明人: Andrew G. Haerle , Richard F. Buckley , Richard R. Hengst
- 申请人： Saint-Gobain Ceramics & Plastics, Inc.
- 申请人地址： null
- 专利权人： Saint-Gobain Ceramics & Plastics, Inc.
- 当前专利权人： Saint-Gobain Ceramics & Plastics, Inc.
- 当前专利权人地址： null
- 主分类号： H01L021/322
- IPC分类号： H01L021/322
摘要：
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer