摘要:
A wafer carrier for supporting a plurality of wafers, including a plurality of slots provided in a cradle, the cradle being formed of silicon carbide and having an oxide layer overlying the silicon carbide.
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer
摘要:
A semiconductor processing component formed of SiC, wherein an outer surface portion of the component has a surface impurity level that is not greater than ten times a bulk impurity level of the outer surface portion.
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer