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1.发明申请Method for treating semiconductor processing components and components formed thereby 有权用于处理由此形成的半导体处理部件和部件的方法公开(公告)号：US20040208815A1
公开(公告)日：2004-10-21
申请号：US10828680
申请日：2004-04-21
IPC分类号： C04B035/52 , C04B035/56 , C01B031/30 , G03C007/32 , B32B015/04 , B32B009/00 , B32B019/00
CPC分类号： C04B41/459 , C01B32/956 , C01P2006/80 , C04B35/565 , C04B35/62222 , C04B41/009 , C04B41/80 , C04B2235/3826 , C04B2235/428 , C04B2235/72 , C04B2235/80 , C04B2235/963 , H01L21/6733 , Y10T428/12576 , Y10T428/26 , C04B41/4519 , C04B41/4556 , C04B41/5035
摘要： A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer
摘要翻译： 一种处理半导体处理元件的方法，包括：将元件在高温下暴露于卤素气体，氧化该元件以形成氧化物层，并除去氧化物层
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公开(公告)号：US20040209445A1
公开(公告)日：2004-10-21
申请号：US10414563
申请日：2003-04-15
IPC分类号： H01L021/322
CPC分类号： C04B41/459 , C01B32/956 , C01P2006/80 , C04B35/565 , C04B35/62222 , C04B41/009 , C04B41/80 , C04B2235/3826 , C04B2235/428 , C04B2235/72 , C04B2235/80 , C04B2235/963 , H01L21/6733 , Y10T428/12576 , Y10T428/26 , C04B41/4519 , C04B41/4556 , C04B41/5035
摘要： A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer
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