Invention Application
US20040238889A1 Process for making a silicon-on-insulator ledge and structures achieved thereby
审中-公开
制造绝缘体上硅栅的方法和由此实现的结构
- Patent Title: Process for making a silicon-on-insulator ledge and structures achieved thereby
- Patent Title (中): 制造绝缘体上硅栅的方法和由此实现的结构
-
Application No.: US10880896Application Date: 2004-06-30
-
Publication No.: US20040238889A1Publication Date: 2004-12-02
- Inventor: Fernando Gonzalez , Chandra Mouli , Lyle Jones
- Applicant: Micron Technology, Inc.
- Applicant Address: null
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: null
- Main IPC: H01L027/01
- IPC: H01L027/01
Abstract:
A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep implantation region. The deep implantation region is formed at various process stages according to embodiments. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.
Information query
