发明申请
- 专利标题: Plasma processing device and plasma processing method
- 专利标题(中): 等离子体处理装置和等离子体处理方法
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申请号: US10836268申请日: 2004-05-03
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公开(公告)号: US20050000445A1公开(公告)日: 2005-01-06
- 发明人: Nobuo Ishii
- 申请人: Nobuo Ishii
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 优先权: JP128860/2003 20030507
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; B01J19/08 ; C23C16/505 ; H01J37/32 ; H01L21/205 ; H01L21/3065 ; C23C16/00
摘要:
A plasma processing device includes a susceptor, processing vessel, dielectric plate, antenna, and projection. The susceptor has a stage surface on which a target object is to be arranged. The processing vessel accommodates the susceptor and has an opening in a side which opposes the stage surface of the susceptor. The dielectric plate closes the opening of the processing vessel. The antenna supplies a high-frequency electromagnetic field into the processing vessel through the dielectric plate. The projection projects from a surface of the antenna which opposes the dielectric plate toward the dielectric plate. The projection is conductive at least at its surface. A plasma processing method is also disclosed.
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