发明申请
- 专利标题： Etching method and plasma processing method
- 专利标题（中）： 蚀刻方法和等离子体处理方法
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申请号： US10902893申请日： 2004-08-02
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公开(公告)号： US20050000939A1公开(公告)日： 2005-01-06
- 发明人: Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
- 申请人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 优先权： JPJP11-241427 19990827
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H05H1/46 ; C23F1/00
摘要：
A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.
公开/授权文献
- US07211197B2 Etching method and plasma processing method 公开/授权日：2007-05-01