Invention Application
- Patent Title: Solid-state imaging device and drive control method for the same
- Patent Title (中): 固态成像装置和驱动控制方法相同
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Application No.: US10826038Application Date: 2004-04-16
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Publication No.: US20050001915A1Publication Date: 2005-01-06
- Inventor: Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
- Applicant: Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
- Priority: JPJP2003-113840 20030418
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/335 ; H04N5/355 ; H04N5/361 ; H04N5/369 ; H04N5/374 ; H04N5/376

Abstract:
A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
Public/Granted literature
- US07468750B2 Solid state imaging device having transition time relationship for drive signals Public/Granted day:2008-12-23
Information query
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