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    Solid-state imaging device and drive control method for the same
    1.
    发明申请
    Solid-state imaging device and drive control method for the same 有权
    固态成像装置和驱动控制方法相同

    公开(公告)号：US20050001915A1

    公开(公告)日：2005-01-06

    申请号：US10826038

    申请日：2004-04-16

    Applicant: Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    Inventor： Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    IPC: H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/376

    CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

    Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

    Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

    Solid state imaging device having transition time relationship for drive signals
    3.
    发明授权
    Solid state imaging device having transition time relationship for drive signals 有权
    具有用于驱动信号的转换时间关系的固态成像装置

    公开(公告)号：US07468750B2

    公开(公告)日：2008-12-23

    申请号：US10826038

    申请日：2004-04-16

    Applicant: Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    Inventor： Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/00

    CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

    Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio.Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

    Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

    Solid-state imaging device and drive control method for the same
    4.
    发明申请
    Solid-state imaging device and drive control method for the same 有权
    固态成像装置和驱动控制方法相同

    公开(公告)号：US20090072123A1

    公开(公告)日：2009-03-19

    申请号：US12231365

    申请日：2008-09-02

    Applicant: Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    Inventor： Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

    IPC: H01L27/146

    CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

    Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

    Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

    Solid-state imaging device including a plurality of pixels and a plurality of signal lines
    5.
    发明授权
    Solid-state imaging device including a plurality of pixels and a plurality of signal lines 有权
    固态成像装置包括多个像素和多个信号线

    公开(公告)号：US08482643B2

    公开(公告)日：2013-07-09

    申请号：US12685515

    申请日：2010-01-11

    Applicant: Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    Inventor： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    IPC: H04N5/335

    CPC classification number: H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

    Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等。

    Solid-state imaging apparatus and its signal reading method
    6.
    发明申请
    Solid-state imaging apparatus and its signal reading method 有权
    固态成像装置及其信号读取方法

    公开(公告)号：US20060164527A1

    公开(公告)日：2006-07-27

    申请号：US10535970

    申请日：2003-11-21

    Applicant: Takamasa Wada ,  Eiichi Funatsu ,  Keiji Mabuchi ,  Ken Nakajima ,  Takashi Abe ,  Tomoyuki Umeda ,  Nobuo Nakamura ,  Hiroaki Fujita ,  Hiroki Sato

    Inventor： Takamasa Wada ,  Eiichi Funatsu ,  Keiji Mabuchi ,  Ken Nakajima ,  Takashi Abe ,  Tomoyuki Umeda ,  Nobuo Nakamura ,  Hiroaki Fujita ,  Hiroki Sato

    IPC: H04N9/04

    CPC classification number: H04N9/045

    Abstract: When pixel signals are separately read from a plurality of horizontal signal lines to achieve high-speed processing, color difference in image signals and stripes are eliminated. In the operation of reading the pixel signals from the (2n)th row, the pixel signals from R pixels on odd columns are output to an output system A through a horizontal signal line (60A). On the other hand, the pixel signals from Gr pixels on even columns are output to an output system B through a horizontal signal line (60B). In the operation of reading the pixel signals from the (2n+1)th row, the pixel signals from Gb pixels on the odd columns are output to the output system B through the horizontal signal line (60B) by the switching operation in a switching circuit (50). Similarly, the pixel signals from B pixels on the even columns are output to the output system A through the horizontal signal line (60A) by the switching operation in the switching circuit (50).

    Abstract translation: 当从多个水平信号线分别读取像素信号以实现高速处理时，消除了图像信号和条纹中的色差。 在从第（2n）行读取像素信号的操作中，通过水平信号线（60A）将来自奇数列的R个像素的像素信号输出到输出系统A. 另一方面，偶数列上的Gr像素的像素信号通过水平信号线（60B）输出到输出系统B. 在从第（2n + 1）行读取像素信号的操作中，来自奇数列的Gb像素的像素信号通过水平信号线（60B）通过切换操作被输出到输出系统B 开关电路（50）。 类似地，通过切换电路（50）中的切换操作，通过水平信号线（60A）将偶数列上的B像素的像素信号输出到输出系统A.

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