发明申请
- 专利标题： Photomask for forming photoresist patterns repeating in two dimensions and method of fabricating the same
- 专利标题（中）： 用于形成二维重复的光刻胶图案的光掩模及其制造方法
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申请号： US10827556申请日： 2004-04-19
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公开(公告)号： US20050003278A1公开(公告)日： 2005-01-06
- 发明人: Chan Hwang , In-Sung Kim , Young-Seog Kang
- 申请人： Chan Hwang , In-Sung Kim , Young-Seog Kang
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR2003-45446 20030704
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; G03C5/00 ; G03F1/00 ; G03F1/36 ; G03F9/00
摘要：
A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.
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