发明申请
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US10824639申请日： 2004-04-15
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公开(公告)号： US20050003576A1公开(公告)日： 2005-01-06
- 发明人: Mitsuo Umemoto , Kazumasa Tanida
- 申请人： Mitsuo Umemoto , Kazumasa Tanida
- 申请人地址： JP Moriguchi-city
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-city
- 优先权： JP2003-112433 20030417
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/44 ; H01L21/56 ; H01L21/58
摘要：
The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.
公开/授权文献
- US07169639B2 Semiconductor device manufacturing method 公开/授权日：2007-01-30
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