发明申请
US20050003597A1 Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same
有权
在半导体器件中形成栅氧化层的方法和形成具有该栅电极的栅电极的方法
- 专利标题： Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same
- 专利标题（中）： 在半导体器件中形成栅氧化层的方法和形成具有该栅电极的栅电极的方法
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申请号： US10878103申请日： 2004-06-28
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公开(公告)号： US20050003597A1公开(公告)日： 2005-01-06
- 发明人: Jae-Jong Han , Woo-Sung Lee , Sang-Jin Park
- 申请人： Jae-Jong Han , Woo-Sung Lee , Sang-Jin Park
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2003-45488 20030705
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8238 ; H01L21/8242
摘要：
A first gate oxide layer pattern having a first thickness is formed in a first region of a substrate and a second gate oxide layer having a second thickness is formed in a second region of a substrate. A surface of the second gate oxide layer is selectively nitrified to form an oxynitride layer, thereby reducing a depletion effect of a poly gate and a fluctuation of threshold voltage.
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